Publications
TITLE |
AUTHORS |
JOURNAL |
| 2011 | ||
| Influence of composition and bottom electrode properties on the local conductivity of TiN/HfTiO2 and TiN/Ru/HfTiO2 stacks. | D. Martin, M. Grube, P. Reinig, L. Oberbeck, J. Heitmann , W. M. Weber, T. Mikolajick and H. Riechert | Appl. Phys. Lett. 98, 012901 (2011) |
| 2010 | ||
| An investigation of the electrical properties of MIS capacitors with pyrolytic carbon electrodes | A. P. Graham, K. Richter, T. Jay, W. M. Weber, S. Knebel, U. Schröder and T. Mikolajick | |
| Improved high-temperature etch processing of high-k metal gate stacks in scaled TANOS memory devices | J. Paul, V. Beyer, M. Czernohorsky, M. F. Beug, K. Biedermann, M. Mildner, P. Michalowski, E. Schütze, T. Melde, S. Wege, R. Knöfler, and T. Mikolajick | Microelectronic Engineering (2010) 87, 5-8, 1629-1633 |
| SrTiO3 thin film capacitors on silicon substrates free from interfacial | S. Schmelzer, D. Bräuhaus, U. Böttger, S. Hoffmann-Eifert, P. Meuffels, R. Waser, P. Reinig L. Oberbeck, and U. Schroeder |
Applied Physics Letters 97, 132907 (2010) |
| An investigation of the electrical properties of pyrolytic carbon in reduced dimensions; vias and wires |
A. P. Graham, G. Schindler, G. S. Duesberg, T. Lutz and W. M. Weber | J. Appl. Phys. 107, 114316 (2010) |
| Direct Comparison of Catalyst-Free and Catalyst-induced GaN Nanowires | C. Chèze, L. Geelhaar, O. Brandt, W. M. Weber,H. Riechert, S. Münch, R. Rothemund, S. Reitzenstein, A. Forchel, T. Kehagias, P. Komninou, G. P. Dimitrakopulos and T. Karakostas | Nano Research (3) 528 (2010) |
| Modeling of leakage currents in high- dielectrics: Three-dimensional approach via kinetic Monte Carlo | G. Jegert, A. Kersch, W. Weinreich, U. Schröder, and P. Lugli | Appl. Phys. Lett. 96, 1 2010accepted |
| Nanocrystalline Materials: Optimization of Thin Film Properties | J. Heitmann and T. Mikolajick | ECS Transactions 28(2) (2010) 451 - 460. |
| The influence of bottom oxide thickness on the extraction of the trap energy in SONOS structures | K. Bernert, Ch. Oestreich, J. Bollmann, and T. Mikolajick | Applied Physics A (2010) 100 249–255 |
| 2009 | ||
| Local charge trsnsport in nanoscale amorphous and crystalline regions of high-k (Zr02)0.8(Al2O3)0.2 thin fims | D. Martin, M. Grube, W. M. Weber, J. Ruestig, O. Bierwagen, L. Geelhaar and H. Riechert | Appl. Phys. Lett. 95, 142906 (2009) |
| 2008 | ||
| Analysis of the hysteretic behavior of silicon nanowire transistors | Z. Fahem, G. Csaba, C.M. Erlen, P. Lugli, W. M. Weber, L. Geelhaar, H. Riechert | Phys. Stat. Sol. (c) 5, p. 27 (2008) |
| 2007 | ||
| Silicon to nickel-silicide axial nanowire heterostructures for high performance electronics | W. M. Weber, L. Geelhaar, E. Unger, C. Chèze, F. Kreupl, H. Riechert, P. Lugli | Phys. Stat. Sol. (b) 244, 4170 (2007) |
| Axial and radial growth of Ni-induced GaN nanowires | L. Geelhaar, C. Chèze, W. M. Weber, R. Averbeck, H. Riechert, Th. Kehagias, Ph. Komninou, G. P. Dimitrakopulos, Th. Karakostas | Appl. Phys. Lett. 91, 093113 (2007) |
| Leakage currents at crystallites in ZrAlxOy thin films measured by conductive atomic-force microscopy | O. Bierwagen, L. Geelhaar, X. Gay, M. Piešiņš, H. Riechert, B. Jobst, A. Rucki | Appl. Phys. Lett. 90, 23901 (2007) |
| 2006 | ||
| Silicon-nanowire transistors with intruded nickel-silicide contacts | W. M. Weber, L. Geelhaar, A. P. Graham, E. Unger, G. S. Duesberg, M. Liebau, W. Pamler, C. Cheze, H. Riechert, P. Lugli and F. Kreupl. | Nano Letters 6, p. 2660-2666 (2006) |
|
Silicon nanowires: catalytic growth and electrical characterization |
W. M. Weber, G. S. Duesberg, A. P. Graham, M. Liebau, E. Unger, C. Cheze, L. Geelhaar, P. Lugli, H. Riechert and F. Kreupl. | Phys. Stat. Sol. (b) 243, p. 3340-3345 (2006) |
| Non-linear gate length dependence of on-current in Si-Nanowire FETs | W. M. Weber, A. P. Graham, G. S. Duesberg, M. Liebau, C. Cheze, L. Geelhaar, E. Unger, W. Pamler, W. Hoenlein, H. Riechert, F. Kreupl, P. Lugli | IEEE 36th ESSDERC proc. p.423-426 (2006) |